POWER ELECTRONICS DESIGN Using AI to Successfully Navigate the Complexity of Power Electronics Design ISSUE 3 – Oct/Nov 2026 www.power-mag.com Also inside this issue News | Market News | Power Modules | Gallium Nitride GaN Power Conversion | Power Passive Components Bidirectional Charging | Electrified Thermal Processes Electronica 2026 | Website Locator
CONTENTS www.power-mag.com Issue 3 2026 Power Electronics Europe 3 News & Features Editor Leslah Garland Tel: +44 (0)1732 370340 Email: leslah.garland@dfamedia.co.uk Publisher Damien Oxlee Tel: +44 (0)1732 370342 Email: damien.oxlee@dfamedia.co.uk www.power-mag.com Production Editor Chris Davis Tel: +44 (0)1732 370340 Email: chris@dfamedia.co.uk Financial Manager Joanne Morgan Email: accounts@dfamedia.co.uk Reader/Circulation Enquiries Perception Tel: +44 (0) 1825 701520 Email: cs@perception-sas.com INTERNATIONAL SALES OFFICES Mainland Europe: Victoria Hufmann Norbert Hufmann Tel: +49 911 9397 643 Fax: +49 911 9397 6459 Email: pee@hufmann.info Eastern US Damien Oxlee Tel: +44 (0)1732 370342 Email: damien.oxlee@dfamedia.co.uk Western US and Canada Damien Oxlee Tel: +44 (0)1732 370342 Email: damien.oxlee@dfamedia.co.uk Japan: Yoshinori Ikeda, Pacific Business Inc Tel: 81-(0)3-3661-6138 Fax: 81-(0)3-3661-6139 Email: pbi2010@gol.com Taiwan Prisco Ind. Service Corp. Tel: 886 2 2322 5266 Fax: 886 2 2322 2205 Circulation and subscription: Power Electronics Europe is available for the following subscription charges. Power Electronics Europe: annual charge UK/NI £95, overseas $160, EUR 150. Contact: DFA Manufacturing Media, 192 High Street, Tonbridge, Kent TN9 1BE Great Britain. Tel: +44 (0)1732 370340. Refunds on cancelled subscriptions will only be provided at the Publisher’s discretion, unless specifically guaranteed within the terms of subscription offer. Editorial information should be sent to The Editor, Power Electronics Europe, 192 High Street, Tonbridge TN9 1BE U.K. The contents of Power Electronics Europe are subject to reproduction in information storage and retrieval systems. All rights reserved. No part of this publication may be reproduced in any form or by any means, electronic or mechanical including photocopying, recording or any information storage or retrieval system without the express prior written consent of the publisher. Printed by: Warners. ISSN 1748-3530 PAGE 4 News PEE looks at the latest News and company developments PAGE 7 Market News PAGE 10 The Modular, Containerised Heart of the Data Centre By Michael Beagan, Managing Director of TES Power PAGE 12 Low Voltage GaN Converter Gate Drive and Measurement Kurk Mathews, Senior Applications Manager, and Luis Onofre Lazaro, Applications Engineer, Analog Devices PAGE 15 EPC Releases Two New White Papers on GaN Power Conversion for AI Data Centers and Advanced Motor Drives New technical papers examine 800 VDC power delivery for AI infrastructure and integrated 100 V GaN power stages for robotics, drones, and precision motion control PAGE 16 Power Passive Components PAGE 23 Why Bidirectional Charging Is Becoming Central to Zero-Emission Buildings By Thomas Hauer, Field Application Engineer and Power Specialist, Avnet Silica PAGE 26 Supply Security Drives Power Electronics Geopolitical tensions and material constraints are reshaping supply chains. Learn why diversified sourcing of both basic and advanced materials are critical for resilient and competitive power electronics PAGE 28 Powering Electrified Thermal Processes for Lithium-Ion Battery Recycling Srikar Gunda, Applications Engineer at Advanced Energy Industries, Inc PAGE 30 Electronica 2026 PAGE 33 Web Locator Using AI to Successfully Navigate the Complexity of Power Electronics Design By Tobias Pohl, CEO, CELUS More details on page 20. FEATURE STORY Subscribe for your FREE copy now
4 NEWS Issue 3 2026 Power Electronics Europe www.power-mag.com 3300V SiC MOSFET Module for Industrial Equipment Toshiba Electronics Europe has announced the expansion of its line-up with the launch of IX800FXF2YMS4, a dual SiC MOSFET module. The new module offers high surge-current capability to support reliable operation in industrial equipment, including inverters and converters for railway vehicles and power conversion systems such as solid-state transformers, uninterruptible power supplies (UPS) and energy storage systems, and industrial motor control equipment. It also helps improve system efficiency through reduced conduction and switching losses. The IX800FXF2YMS4 uses Toshiba’s improved third-generation silicon carbide (SiC) MOSFET devices. The module has a drain-source voltage (VDSS) rating of 3300V and a drain current (DC) rating (ID) of 800A. The new IX800FXF2YMS4 has an I2t rating of 300kA2s for its diode at initial channel temperature of 175°C, VGS=-6V, a single half-sinewave 10ms pulse, and F.R.=1%. This indicates the diode’s surge current capability under abnormal operating conditions. An optimised SiC MOSFET design enables this performance, helping to improve equipment reliability. In addition, the module’s low conduction and switching losses contribute to improved equipment efficiency and can help reduce cooling requirements. Typical drain-source on-voltage (sense) (VDS(on)sense) is 1.4V at ID=800A, VGS=+20V and Tch=25°C. Typical turn-on and turn-off switching losses (Eon and Eoff) are 185mJ and 175mJ, respectively, at VDD=1800V, ID=800A and Tch=175°C. The new product is housed in the iXPLV (Intelligent Flexible Package Low Voltage) package, which uses silver (Ag) sintering die attach to improve heat resistance and reliability, supporting a channel temperature rating of 175°C. Its launch expands Toshiba’s line-up of SiC MOSFET modules in the iXPLV package to four products. Toshiba says it will continue to expand its line-up of SiC MOSFET modules for industrial equipment and provide a wider range of product options to meet various equipment specifications and applications. Toshiba will also contribute to improved reliability, higher efficiency and more compact industrial equipment. Read more about the new IX800FXF2YMS4 SiC MOSFET module on Toshiba’s website: https://toshiba.semiconstorage.com/eu/semiconductor/product/mosfets/sic-mosfetmodules/detail.IX800FXF2YMS4.html Follow the link below for more on Toshiba’s SiC Power Devices Power Semiconductors | Toshiba Electronic Devices & Storage Corporation | Europe(EMEA) https://toshiba.semicon-storage.com/eu/top.html U.S. Government Selects Navitas Navitas Semiconductor, an industry leader in nextgeneration GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors, has announced it has been awarded the ALATTIS (Accelerated, Large-Area, 10 kV SiC IGBT) programme to develop nextgeneration 10 kV silicon carbide (SiC) power semiconductor technology. Following a rigorous competitive evaluation, the U.S. Army selected Navitas from among leading U.S. silicon carbide technology companies in recognition of its unmatched leadership in UHV SiC innovation, proven ability to deliver defencegrade performance and reliability, and resilient U.S.-anchored manufacturing ecosystem for advanced power semiconductor technologies. The ALATTIS prototype project will develop, execute, and validate a novel domestic manufacturing process for ultra-high-voltage (≥10 kV) silicon SiC power semiconductor devices through iterative design, fabrication, and testing. The project is sponsored by the Army Research Laboratory (ARL), which operates under the U.S. Army Combat Capabilities Development Command (DEVCOM). The ALATTIS prototype programme seeks to develop, execute, and validate a novel and currently unavailable domestic manufacturing process for 10 kV IGBTs. ALATTIS is supported by the Joint Experimentation and Technology Accelerator (JETX) with the aim of advancing high-power electronics for critical defence and infrastructure applications. The programme will accelerate the development of next-generation 10 kV SiC insulated-gate bipolar transistors (IGBTs) and associated PiN diode technologies for mission-critical systems used by the Armed Forces. Navitas’ GeneSiC SiC power semiconductor portfolio, led by its flagship trench-assisted planar (TAP) MOSFET architecture, spans voltage ratings from 650 V to 6.5 kV and is engineered, manufactured, and supported by a resilient U.S.- anchored supply chain, enabling secure domestic production of advanced power semiconductor technologies for next-generation defence and critical infrastructure applications. Navitas says it has pioneered multiple industry firsts in UHV SiC, including:
NEWS 5 Power Electronics Europe Issue 3 2026 Power Electronics Europe 6.5 kV SiC thyristors in 2010, recognised with a 2010 R&D 100 Award 10–15 kV PiN diodes in 2012 6.5 kV SiC MOSFETs commercial release in 2021 “The ALATTIS award marks a significant milestone in advancing ultra-high-voltage silicon carbide (SiC) power devices and recognises Navitas’ over 20 years of innovation in delivering reliable, ultra-high-voltage, high-power SiC technologies,” said Siddarth Sundaresan, SVP and Chief Technology Officer at Navitas. “This programme enables Navitas to extend its leadership beyond SiC MOSFETs by developing next-generation 10 kV SiC IGBTs built on our unique, patented trench-assisted planar (TAP) architecture and integrated with advanced PiN diode technologies.” To learn more about Navitas’s capabilities in UHV SiC technology, please contact a Navitas Representative or email: info@navitassemi.com. https://navitassemi.com/home Renesas Electronics Corporation, a premier supplier of advanced semiconductor solutions, says it has launched the industry’s first 650V GaN device with dual-side cooling for high-density power conversion in 800V highvoltage DC (HVDC) AI data centre architectures. The company says the new TP65H020G4PLSGBD D-Mode device delivers 20 milliohms (mΩ) on-resistance — one of the lowest in its class — in an ultracompact, dual-side-cooled (DSC) PQFN package that handles more power in less space. Renesas is currently sampling the device to major AI Datacenter OEMs and ODMs. Built on its Gen IV Plus GaN architecture, the device is purpose-built for the megawatt-scale demands driving next-generation AI data centres supporting up to 700V operation. It targets the 800V DC/DC intermediate bus converter (IBC) stage that steps down to 48V, 12V or 6V, along with the battery backup (BBU) and capacitor bank (CBU) stages of the sidecar power rack. As rack power climbs from roughly 120 kW toward megawatt scale, space and heat have become critical factors in sustaining the power level. Unlike conventional top-side-cooled packages, the new device dissipates heat from both top and bottom, lowering top-side thermal impedance by 10%. Its 8 x 8mm PQFN footprint is also 57% smaller than the existing 10 x 15mm TOLT package. The device incorporates the full strength of Renesas Gen IV Plus 650V GaN technology: low gate charge and output capacitance, a built-in freewheeling diode with minimal reverse recovery and a high threshold voltage that runs without a negative gate bias. Engineers can drive it with a standard silicon gate driver, switch into the MHz frequency range to minimize passive components and cut overall BOM cost without requiring a specialized E-mode driver. “Customers building megawatt-scale AI data centers are running out of board space and thermal headroom before they hit their power limits,” said John Wiggenhorn, Senior Product Line Director of High-Voltage GaN at Renesas. “With the industry’s first dual-side-cooled 650V GaN, we cool the device from both sides and cut the footprint significantly, so designers can move more power through the intermediate bus without redrawing the board or adding more cooling hardware. And because it keeps the operational simplicity of the silicon gate drive customers already use, it’s an extremely easy upgrade.” The new dual-side-cooled (DSC) PQFN package is defined in collaboration with major AI infrastructure customers, enabling an industry-standard footprint for sourcing flexibility. When paired with Renesas AUX controllers, gate drivers and MCUs, the GaN device creates a one-stop-shop power solution for OEMs, ODMs and hyperscalers moving to 800V architectures. Renesas says it has already validated the approach in silicon. A 6kW, 800Vto-48V LLC DC transformer (DCX) reference design built on the new device and controlled by a Renesas RA6T3 MCU reaches a power density of 2.6 kW/in? with per-module testing measuring full-load efficiency 0.21% higher than an equivalent TOLT-based board. The smaller package also saves PCB space and enables a better-matched layout across the FETs. 800V-to-12V and 6V DC/DC IBC reference designs also leverage the new DSC 8?8 platform, delivering similar enhanced performance, scalability and power density levels. https://www.renesas.com/en 650V GaN Device with Dual-Side Cooling Nitride Chip Resistors Deliver High Power Stackpole Electronics says its RMAN series combines thick film resistor technology with the superior heat-dissipating capability of an aluminium nitride (AlN) substrate for industrial and automotive electronics operating at high power or under sustained load. The construction helps reduce localised heating for higher power density, lower operating temperatures, and improved stability. Aluminium nitride provides thermal conductivity several times higher than conventional alumina while maintaining electrical insulation. This makes the RMAN well suited for compact power electronics where effective thermal management directly impacts resistor performance and reliability. Industrial applications include gate and snubber resistors for IGBT, SiC, and GaN power modules, along with pre-charge, discharge, bleeder, and currentsensing functions in motor drives, power supplies, and inverters. Automotive applications include battery management systems, onboard chargers, DC-DC converters, and inverter gate drives, where continuous loading and thermal cycling demand stable resistor performance.
6 NEWS Issue 3 2026 Power Electronics Europe Power Electronics Europe RMAN chip resistors provide power ratings up to 2.4 W in the 1206 size and 3.4 W in the 2512 size, providing substantially higher power capability than conventional alumina-based thick film designs in compact PCB footprints. The RMAN is said to be ideal for: Industrial motor drives, inverters, and power conversion IGBT, SiC, and GaN gate drive and snubber circuits Factory automation and high-power controls EV and hybrid vehicle power electronics Battery management systems, onboard chargers, and DC-DC converters For more information about the RMAN Series Thick Film High Power Aluminium Nitride Substrate Chip Resistor, visit https://www.seielect.com/Catalog/SEI-RMAN.pdf https://www.seielect.com/ Bringing Power Electronics Technology to AI Data Centres Rimac Technology, a Croatian EV technology company specialising in battery, powertrain and electronic systems, and ECOBLOX, a global innovator in AI compute infrastructure, have announced a Joint Development Agreement to deliver a state-of-the-art Modular Data Centre (MDC) solution. The joint offering integrates Rimac Technology’s battery and power electronics technology with ECOBLOX’s AI infrastructure, MDC architecture, design and hardware/software system integration. As AI and high-performance computing drive demand for significantly more computing power, the availability of energy, cooling capacity and suitable deployment space is becoming increasingly important for data centre development. The joint solution addresses these challenges in a compact, integrated architecture built for high-density workloads. A Modular Architecture for AI Infrastructure As AI compute transitions towards 400 VDC and 800 VDC architectures, Rimac Technology says it is leveraging over a decade of high-voltage engineering expertise to develop next-generation power solutions. Partnering with ECOBLOX, the two companies are engineering high-density modular solutions tailored to the demanding power requirements of AI compute. The Modular Data Centre integrates Rimac Technology UNI battery modules, streamlining serviceability, and enabling longer continuous backup power for critical computing hardware. Its Battery Management System delivers real-time monitoring and control, streaming core telemetry directly into the ECOBLOX Data Centre Infrastructure Management platform for centralised visibility, automated alarms and analytics, while power conversion, UPS, precision cooling and IT infrastructure are unified within a single, modular footprint. Proven Technologies, Combined for AI Infrastructure Developed to strict automotive standards, Rimac Technology UNI battery modules combine high-performance density, compact packaging, built-in safety and advanced thermal management in a high-volume industrialised battery solution. They are designed for use across automotive, energy storage, marine, off-highway, commercial and industrial applications, and now AI infrastructure. As an NVIDIA Preferred Partner, ECOBLOX delivers complete, endto-end AI infrastructure—from high-density factory-engineered Modular Data Centres (MDCs) to full GPU system integration, encompassing cluster design, procurement, installation, and managed service operations. By pairing advanced air- and liquidcooled pre-fab enclosures with its proprietary DCIM and HPC/GPUaaS software stacks, ECOBLOX enables cloud providers, enterprises, and sovereign entities to deploy turnkey, exascale-ready compute directly at local power sources in just 6 to 8 months. “Partnering with Rimac Technology allows us to redefine highdensity power delivery for the next generation of AI compute,” said Doug Makishima, CEO at ECOBLOX. “By integrating automotive-grade energy storage and power electronics directly into our modular data centre architecture, we are removing grid constraints and enabling cloud providers and enterprise customers to deploy scalable, powerresilient AI clusters faster and more efficiently than ever before.” “Our battery and power electronics technologies have been developed and industrialised to meet some of the most demanding requirements in the automotive industry”, said Nurdin Pitarevic, CEO of Rimac Technology. “The same capabilities are increasingly relevant to high-power AI infrastructure, where power density, thermal management, safety and reliability are critical. Together with ECOBLOX, we are applying these technologies to a new high-power application and bringing automotive-grade technology to AI data centres.” The completed modular data centre is on track for installation at Rimac Campus in November 2026, where it will serve as a live demonstration of the joint solution and a platform for customer and partner engagement. https://www.rimac-technology.com/ https://ecoblox.com/ To receive your own copy of Power Electronics Europe subscribe today at: www.power-mag.com
MARKET NEWS 7 Power Electronics Europe Issue 3 2026 Power Electronics Europe Semiconductor Manufacturing Equipment Market Size Worth USD 211.29 Billion By 2034 / CAGR: 7.6% Artificial intelligence may be dominating headlines, but the real competition is unfolding inside semiconductor fabrication plants. As chipmakers race to deliver processors for AI servers, advanced smartphones, electric vehicles, data centres, and next-generation communications, the equipment used to manufacture those chips is becoming a strategic asset. Lithography, deposition, etching, inspection, metrology, packaging, and testing technologies increasingly determine how quickly manufacturers can scale advanced designs while maintaining yield and controlling costs. That is helping reshape the Semiconductor Manufacturing Equipment Market, which was valued at $109.33 billion in 2025 and is projected to reach $211.29 billion by 2034, expanding at a 7.6% CAGR from 2026 to 2034. The bigger story, however, is how AI, geopolitical pressures, advanced packaging, and semiconductor localisation are changing what chipmakers need from equipment suppliers. The Industry Shift Behind Semiconductor Manufacturing Equipment The semiconductor industry is entering a period in which simply producing more chips is no longer enough. Manufacturers must produce increasingly complex architectures with tighter tolerances, higher performance, and better energy efficiency. AI is accelerating this transition. Highperformance processors require sophisticated manufacturing processes, while data-centre expansion is increasing demand for advanced logic and memory. The Polaris report identifies logic as the largest product segment in 2025, reflecting demand from AI, high-performance computing, and advanced data-centre applications. At the same time, shrinking feature sizes are increasing the importance of EUV lithography, precision etching, thin-film deposition, process control, and defect inspection. Advanced packaging is becoming equally important as chipmakers explore 2.5D and 3D architectures to overcome some of the limitations of conventional scaling. What the Market Means for Businesses For equipment manufacturers, the opportunity extends well beyond selling individual machines. Semiconductor fabs operate within highly interconnected production environments, meaning customers increasingly value equipment that can integrate with automation, factory software, process-control systems, and predictive maintenance platforms. This creates opportunities in both front-end and back-end manufacturing. Lithography, deposition, etching, cleaning, and wafer processing remain essential, while advanced packaging, bonding, metrology, and testing are gaining strategic importance. There is also a major business consideration on the cost side. Semiconductor equipment requires substantial capital expenditure, and customized systems can involve long delivery and qualification cycles. For smaller manufacturers, these costs can make technology upgrades difficult. For established players, however, equipment efficiency, yield improvement, and lifecycle support can become important competitive differentiators. Government policy is another major influence. Subsidies and incentives designed to expand domestic chip production are encouraging new fab construction across multiple regions. That creates downstream demand for everything from fabrication tools to automation, chemical-control, gas-management, inspection, and testing systems. For more information, visit https://www.polarismarketresearch.com/ind ustry-analysis/semiconductormanufacturing-equipment-market Regional Market Dynamics Asia Pacific remains the centre of gravity. The region held the largest market share in 2025, supported by deeply integrated semiconductor ecosystems across Taiwan, South Korea, Japan, and China. Its strength comes not simply from manufacturing capacity but from the concentration of foundries, equipment suppliers, materials companies, and supporting infrastructure. North America, meanwhile, is positioned for the fastest growth through 2034. The CHIPS and Science Act, domestic fab construction, and investment in AI, advanced packaging, and nextgeneration manufacturing are strengthening regional demand for semiconductor equipment. For suppliers, this geographic shift means opportunity is becoming more distributed—even as Asia Pacific retains its manufacturing leadership. Competitive Landscape and Innovation Competition is increasingly defined by specialised technological capabilities. ASML is central to advanced EUV lithography, while Applied Materials and Lam Research have strong positions in deposition and etching. KLA focuses heavily on inspection and measurement, while Advantest and Cohu participate in testing and handling technologies. Tokyo Electron, SCREEN Semiconductor Solutions, EV Group, and Dainippon Screen Group are also among the companies shaping the competitive environment. The competitive frontier is moving toward AIenabled metrology, defect detection, atomic layer deposition, advanced bonding, and equipment designed for heterogeneous integration. Strategic partnerships with chipmakers and materials suppliers are also becoming important because new manufacturing technologies require close collaboration during development and qualification . What Comes Next: From Smaller Chips to Smarter Manufacturing The next phase of the Semiconductor Manufacturing Equipment Market will be shaped by a combination of technological complexity and supply-chain resilience. Three-dimensional integration is particularly important. The report projects 3D ICs to record the fastest growth among dimensions, supported by technologies such as through-silicon vias and hybrid bonding. Meanwhile, memory demand is benefiting from AI training, cloud computing, and data-intensive applications. The equipment itself is also becoming smarter. AI-assisted inspection, predictive maintenance, automated process control, and data-driven yield optimization can help fabs operate expensive tools more efficiently. The Bigger Business Picture Semiconductor manufacturing equipment is becoming more than an industrial supply category. !
8 MARKET NEWS Issue 3 2026 Power Electronics Europe Power Electronics Europe It is increasingly part of the strategic infrastructure supporting AI, communications, automotive technology, and digital economies. As countries seek greater control over semiconductor supply chains and manufacturers pursue ever more complex architectures, the ability to build chips efficiently will depend heavily on the machinery behind them. The winners in the next stage may therefore be determined not only by who designs the most advanced chip, but by who can manufacture that chip at scale, with precision, yield, resilience, and speed. Read More: www.polarismarketresearch.com Infineon opens new backend manufacturing hub in Thailand adding resilient capacity for future growth Infineon Technologies has announced it has officially inaugurated its new backend manufacturing site in Bangkok, Samut Prakan, together with Anutin Charnvirakul, Prime Minister of Thailand and Alexander Gorski, Chief Operations Officer of Infineon Technologies. The site strengthens and further diversifies the company’s global manufacturing footprint while adding capacity for future growth. Strategically located in the heart of Southeast Asia, the site reinforces Infineon’s ability to serve customers worldwide at a time when long-term semiconductor demand continues to grow, driven by digitalisation, electrification and the energy transition. Built for future growth, the facility can scale up to five modules, giving Bangkok the potential to become one of Infineon’s largest backend manufacturing sites over time. As a strategic addition to Infineon’s globally diversified manufacturing network, the site complements the ongoing expansion of Infineon’s frontend manufacturing capacities. “What makes Bangkok such an important addition to our global manufacturing footprint is its unique combination of location and growth potential,” says Alexander Gorski, Chief Operations Officer of Infineon Technologies. “We are establishing a new hub in the heart of Southeast Asia, surrounded by a fast-growing ecosystem and with excellent access to global logistics. This helps us further diversify our manufacturing network across regions and serve our customers with resilient capacity and great flexibility. We have built the Bangkok site with the future in mind. Starting with Module A, the site can grow to up to five modules over time, giving us unique scalability to support future growth.” “Infineon’s new backend manufacturing site in Bangkok, Samut Prakan, is a strong vote of confidence in Thailand’s future as a leading semiconductor location,” says Anutin Charnvirakul, Prime Minister of Thailand. “Together, we are advancing Thailand’s semiconductor ecosystem, strengthening our role in the global value chain and creating new opportunities and highly skilled jobs for future generations. We welcome Infineon’s longterm engagement and look forward to deepening our cooperation.” A long-term investment in Thailand’s semiconductor ecosystem Thailand’s commitment to building a strong semiconductor ecosystem, guided by its national technology strategy, is creating new momentum for advanced manufacturing and technology-driven growth in the region. Thailand offers excellent connections throughout Southeast Asia, proximity to key customer markets and a long-standing semiconductor manufacturing heritage. The Bangkok site builds on local expertise, established partnerships and a highly skilled workforce while contributing to the further development of Thailand’s flourishing semiconductor ecosystem. The site currently employs around 350 people and is expected to grow to approximately 1,000 employees as the first building (Module A) ramps up. Beyond manufacturing, Infineon supports talent development through collaborations with universities, educational institutions and industry partners. Expanding capabilities for complex, highvalue semiconductor solutions The Bangkok site combines advanced automation, scalable design and a digital manufacturing backbone to support efficient, stable and highquality production at scale. Built as a greenfield site, the facility leverages proven expertise from Infineon’s established backend manufacturing locations while providing the flexibility to adapt to evolving customer requirements, new technologies and large production volumes. Equipped with advanced cleanroom, assembly and test capabilities, all supported by a high level of automation, the Bangkok site covers the full spectrum of semiconductor backend processes as well as wafer test. This unique combination strengthens its role within Infineon’s manufacturing network and enables increasingly complex, highvalue semiconductor solutions for applications across the automotive, industrial and energy infrastructure, contributing directly to technologies that drive electrification, energy efficiency and digitalization worldwide. Sustainability built in from the ground up The Bangkok site runs on 100% green electricity, incorporates water recycling and rainwater collection systems and is equipped with solar modules that generate renewable energy on site. Together, these measures support resource-efficient manufacturing and contribute to Infineon’s strategic priority of continuously reducing its carbon footprint across the entire value chain. https://www.infineon.com/ From left to right: Wei Khoe Lim, Senior Vice President and Managing Director, Infineon Technologies Thailand; Narit Therdsteerasukdi, Secretary General, Thailand Board of Investment (BOI); Anutin Charnvirakul, Prime Minister of Thailand; Alexander Gorski, Member of the Management Board and Chief Operations Officer, Infineon Technologies AG; Dr. Ekniti Nitithanprapas, Deputy Prime Minister and Minister of Finance; Michael Reiffenstuel, Ambassador of the Federal Republic of Germany to the Kingdom of Thailand; Mr. George Lee, Executive Vice President, Backend, Infineon Technologies
MARKET NEWS 9 Power Electronics Europe Issue 3 2026 Power Electronics Europe Farnell adds Amphenol Nexus Technologies to strengthen rugged connectivity solutions globally Farnell has announced a new partnership with Amphenol NEXUS Technologies, expanding access to rugged connector and switching solutions for customers designing and maintaining critical communications and control systems. Through the partnership, Farnell will offer Amphenol NEXUS Technologies’ portfolio of: Audio connectors Waterproof breakaway connectors TAC connectors Ranger connectors M55116/MIL-SPEC-type connectors Microphone and telephone plugs and jacks Momentary push-button switches Designed for demanding environments, the products deliver reliable performance in applications where signal integrity, durability and dependable operation are essential. The portfolio supports customers across a range of industries, including: Military and defence communications Commercial aviation electronics Telecommunications Medical devices Simulation controls Motorsport Marine applications Agricultural equipment By adding Amphenol NEXUS Technologies, Farnell provides engineers, OEMs and procurement professionals with greater access to proven connectivity solutions designed for critical communications and control systems. “This partnership gives our customers access to a broader range of trusted connectivity solutions for demanding communications and control applications,” said Tony Coletto, Vice President, Supplier Management, Farnell. “Amphenol NEXUS Technologies’ expertise in rugged audio connectors, switches and interconnect technologies helps engineers and procurement teams source reliable products that perform in harsh and mission-critical environments. Founded in 1961 and part of Amphenol Corporation since 2008, Amphenol NEXUS Technologies has built a reputation for manufacturing rugged, high-quality connector and switch solutions. Its products are widely used in military and commercial communications markets and support applications requiring reliable connectivity and mechanical performance. “We are excited to work with Farnell to make our products available to a broader global customer base,” said Greg Diblasi, General Manager, Amphenol NEXUS Technologies. “Farnell’s strong engineering audience, technical expertise and global reach make them an ideal partner. Together, we look forward to helping customers access the reliable, high-performance technologies they need for critical communications and control applications.” Amphenol NEXUS Technologies products are available now from Farnell in EMEA, Newark in North America, and element14 in APAC. https://uk.farnell.com/ Navitas Closes Acquisition of Claros, Advancing AI Infrastructure with Grid-to-xPU Power Delivery Navitas Semiconductor, a leader in next-generation power semiconductors and power delivery solutions, pioneering GaN, high-voltage and ultra-high-voltage SiC, and IVR technologies, has announced the closing of its previously announced acquisition of Claros, a power management solutions company developing integrated voltage regulator (IVR) technology for next-generation AI data centres, providing the last step to powering the xPU. The completed transaction extends Navitas’ AI infrastructure portfolio from the grid to the xPU, bringing industry-leading IVR capabilities. Claros IVR integrates power transistors, digital control, inductors and capacitors into a single IVR technology stack to enable next-generation Vertical Power Delivery (VPD) and Embedded Power Delivery (EPD) architectures. Its Packaged Integrated Voltage Regulator (pIVR) and Embedded Integrated Voltage Regulator (eIVR) products, based off the same Claros IVR technology stack, move power conversion closer to the xPU and deliver higher efficiency, faster transient response and greater power density, while the modular PowerArray architecture scales power delivery to meet the rapidly increasing demands of next-generation processors at the centre of modern AI systems. Combined with Navitas’ GaN and high-voltage and ultra-high-voltage SiC technologies that enable the new 800V DC architecture, the Company is “breaking the AI infrastructure power wall” by addressing the efficiency, power density and performance bottlenecks emerging as AI data centres and xPUs demand dramatically more power. “Closing this acquisition is a defining step in the Navitas 2.0 transformation and our strategy to power AI infrastructure from grid-to-xPU,” said Chris Allexandre, President and CEO of Navitas. “With power now the bottleneck for AI, increases in power delivery and efficiency are the key enablers of more compute output. The future of AI depends on delivering thousands of amps to increasingly power-hungry processors with unprecedented speed and precision, in addition to re-redefining the racks with higher power centralised systems and higher density architectures. This ‘power wall’ has restricted nextgeneration xPUs in megawatt-scale server racks from achieving the next wave of AI performance. Navitas 2.0 brings together GaN, high-voltage and ultrahigh-voltage SiC, and now IVR technologies to break the power wall and address power conversion across the complete grid-to-xPU architecture. “Additionally, this combination doubles our serviceable addressable market (SAM), deepens our engagement with hyperscalers and AI power platform providers, and strengthens our capabilities and leadership in power delivery for AI infrastructure. As AI power demand accelerates, we are uniquely positioned to deliver greater value for our customers, while driving sustainable long-term growth.” https://navitassemi.com/home
10 POWER MODULES https://www.tesgroup.com/power/ Issue 3 2026 Power Electronics Europe www.power-mag.com The Modular, Containerised Heart of the Data Centre By Michael Beagan, Managing Director of TES Power Driven by the global artificial intelligence (AI) race, demand for data centre capacity and power is accelerating rapidly. Recent estimates point to a 10% to 20% year-onyear increase in global capacity requirements as companies race to meet exponential demand for more powerful compute to support the next generation of AI models. The International Energy Agency estimates that data centres account for approximately 1.5% of global electricity use, or around 415 terawatt-hours annually. This figure has grown by roughly 12% per year over the past five years. Projections suggest that demand could more than double to 945 terawatt-hours by 2030, driven primarily by the rise of energy-intensive accelerated computing for AI, and demand from colocation and cloud continues to grow. To meet this generational surge in demand, the data centre industry needs the ability to scale at speed. This expansion is highlighting pressures on two critical areas of the digital infrastructure buildouts: the effects of AI architectures on the complexity of power distribution and the speed at which new sites can be delivered with traditional construction practices. Something Has to Give In short, the speed and scale of AI demand is incompatible with how data centres have been built for the last two decades. Prior to the AI boom, data centre designs evolved more slowly. Workloads behaved more predictably, and component lifecycles were likewise better understood. The race to build AI-ready infrastructure has removed much of that certainty. Meeting the challenge of a global AI buildout calls for a sea change in how companies approach both data centre design and the build process. Traditionally, data centre construction took the form of large-scale, site-based projects involving multiple contractors and long delivery timelines. These approaches are intensive, complex, and vulnerable to disruption - from extreme weather to labour constraints. Increasingly, building a data centre in this fashion is at odds with the pace required by the current market. To further complicate matters, AI workloads are introducing new challenges in power consumption beyond the obvious problems of rising rack densities. Unlike conventional applications like cloud and colocation, AI systems exhibit very dynamic load profiles. High-density GPU clusters can ramp from low utilisation to peak demand within seconds, then drop off again just as quickly. These rapid fluctuations are difficult to predict and place stress on electrical infrastructure. Managing power flow across the facility without straining transformers and switchgear is the defining design challenge. The knock-on implications are potentially serious throughout the entire power chain. Operators are reporting concerns about accelerated ageing in uninterruptible power supply (UPS) batteries, increased strain on these UPS systems, transformer fatigue, and potential impacts on low-voltage switchgear protection mechanisms. Accommodating these new challenges calls for a new, more responsive and resilient approach to power system design. This shift in workload behaviour is one of several factors driving the next generation of data centre architecture. At the same time as the industry is rapidly iterating new approaches to facility design, the insatiable demand for AI infrastructure is also shortening design cycles and accelerating project timelines. These conflicting factors are increasing the need for flexibility and adaptability throughout the design and build phases as developers and operators seek to solve engineering pain points while delivering capacity at speed. In response, modularisation has emerged as a key design principle for injecting the necessary speed and flexibility into the build process. By transitioning from traditional construction to industrialised manufacturing, builders can reduce complexity and speed up their deployments. Factory-built systems allow for parallel production, improved quality control, and reduced reliance on site-based assembly. Modular, Containerised, Powerful One of the leading areas for modularisation is within the power system. Containerised modular units integrate the full power chain into a single, transportable solution, enabling rapid deployment and scalable expansion. Often described as the heart of the data centre, these plug and play power modules can receive high-voltage electricity from the grid and convert it into
ttps://www.tesgroup.com/power/ POWER MODULES 11 www.power-mag.com Issue 3 2026 Power Electronics Europe stable, regulated power suitable for IT equipment. These containerised modular units comprise several critical components in a small footprint. Advanced transformers step down gridlevel voltages, often as high as 20 kilovolts, to usable levels such as 415 volts, maintaining efficiency and protecting downstream equipment. Intelligent lowvoltage switchgear provides real-time monitoring and protection, enabling precise control of power distribution and rapid fault response. Uninterruptible power supply systems deliver continuity during grid disturbances, bridging the gap to backup generation through integrated battery storage. These systems are enclosed within fire-rated, engineered housings designed to operate in a wide range of environmental conditions. Relocating the assembly of these systems from the construction site to a controlled factory environment delivers clear advantages. It reduces build times, improves consistency, and enables faster commissioning. As a result, operators can bring new capacity online in months rather than years. Companies building multiple facilities can also redirect modules from one project to another if timelines change, creating flexibility at a much higher level than traditional approaches with limited interoperability. In a market where speed to deployment is a primary competitive factor, modular power infrastructure provides a practical pathway to meeting rising demand. Modularisation allows data centre operators to scale capacity in months rather than years, a critical advantage in a market where speed-tomarket is the primary competitive differentiator. As AI continues to drive growth in both compute cap7acity and energy consumption, industrialised approaches to data centre delivery are becoming standard practice across the sector, enabled by modular power systems and broader offsite manufacturing approaches. for ALL Power Electronics Devices T H E ELECTR FYING HIGH-RELIABILITY MATERIALS indium.com ©2026 Indium Corporation Visit us at PCIM Hall 6, Booth 358
12 GALLIUM NITRIDE www.analog.com Issue 3 2026 Power Electronics Europe www.power-mag.com Low Voltage GaN Converter Gate Drive and Measurement Kurk Mathews, Senior Applications Manager, and Luis Onofre Lazaro, Applications Engineer, Analog Devices Abstract This article discusses the need for precise gate voltage control and accurate gate measurements when using gallium nitride field-effect transistors (GaN FETs). Highside gate measurements taken with advanced isolated probes are compared to those obtained using alternative equipment and techniques. Introduction Gallium nitride field-effect transistors (GaN FETs) offer faster switching speeds, smaller packages, and lower power losses than silicon FETs. These features allow power converters to run at higher frequencies, reducing overall solution size while maintaining high efficiency. While the basic DC-to-DC converter design remains the same, GaN introduces additional design and testing challenges. One of the more important challenges is precise control of gate voltage and timing. This can be difficult because the switching times can exceed what traditional controllers and test equipment can manage. Fortunately, GaN-specific controllers and measurement techniques can solve these problems and ensure a reliable power supply design without adding extra complexity. GaN Performance and Characteristics Figure 1 shows a 12V step-down converter based on the LTC7891 synchronous controller driving 100V GaN FETs. Operating at 500kHz, it achieves 97% efficiency with a 20A load and 48V input. This is about 2% higher efficiency - 40% less power loss - than with current generation 100V silicon FETs.* To match this performance with silicon, the switching frequency would need to be less than half, requiring a larger inductor and overall solution size. This device is part of the new family of controllers specifically designed to meet GaN’s gate drive and switching requirements without the need for additional components. Analog Devices’ portfolio of GaN-optimised controllers also includes the LTC7890, a 100V dualchannel buck controller, along with the LTC7893 and LTC7892, which serve as 100V boost and dual-channel boost controllers, respectively. Gate Voltage Silicon FETs are typically specified with a gate-source voltage between 4.5V and 10V and an absolute maximum rating of ±20V. In contrast, a 100V GaN FET might be specified with a gate-source voltage of 5V limited to +6V/-4V for long-term reliability. Meeting these GaN specifications requires a tightly regulated gate supply and minimal high frequency overshoot or undershoot. While a precise 5V supply is sufficient for the low-side FET, additional circuitry or a GaN-specific controller is needed to limit the high-side FET’s gate-source voltage. Gate Driver Supply In Figure 2, a bootstrap capacitor and diode (CBOOT and DBOOT) implement a traditional high-side gate drive supply. When the high-side (TOP) switch turns off, the switch node pulls low - either due to the inductor current or the low-side (BOT) switch turning on. With both switches off, the switch node’s voltage is limited to approximately 1V below ground by the silicon FET’s body diode. In contrast, GaN FETs conduct in the reverse direction, performing like a 2V to 3V body diode. When using a bootstrap diode, the negative switch voltage adds to the bootstrap capacitor’s voltage, increasing the high-side FET’s gate-source voltage. Alternatively, a smart switch can prevent the driver from overcharging without the need for extra clamping diodes. This active switch turns on after the BOT gate is on, resulting in a regulated high-side gate drive voltage that does not depend on the body Figure 1. The LTC7891 step-down (buck) converter schematic. *The LTC7891 controller features 4V to 5.5V gate drive suitable for GaN and logic level silicon FETs. The LTC7897 controller, with 5V to 10V gate drive, is suitable for standard level silicon FETs.
www.analog.com GALLIUM NITRIDE 13 www.power-mag.com Issue 3 2026 Power Electronics Europe diode drop. In the case of extended dead times, these controllers tolerate negative spikes on the switch node. With a stable high-side driver supply established, the next step is accurately measuring the highside FET’s gate-source voltage. Gate Measurements Figure 3 shows the gate and switch waveforms of a GaN-based step-down (buck) converter. Without a series gate turn-on resistor, the TOP FET’s gate-source voltage (VTOP_GS) exceeds the GaN FET’s specified +6V maximum gate-source voltage rating. Adding a 2.2Ω TGUP resistor reduces VTOP_GS and dampens gate and switch node ringing. High impedance oscilloscope probes capture the groundreferenced low-side gate (VBG) and switch node (VSW) waveforms. The TOP FET’s source (VSW) alternates between VIN and ground. The GaN’s high slew rate (over 30V/ns) and 300MHz ringing exceed the practical common-mode limit of differential probes typically used to make VTOP_GS measurements. Fortunately, available optically isolated probes make this measurement possible. These probes, pioneered by Tektronix’s IsoVu™ technology, feature unbelievably high frequency common-mode rejection ratio (CMRR) and are priced accordingly. Figure 4 shows an isolated probe in action. This type of probe connects to the oscilloscope through fibre optic cables, which not only provides galvanic isolation but also keeps common-mode input capacitance low. The probe’s attenuator tip plugs directly into an MMCX connector. The probe can also connect to PCB test points using header pins and an MMCX-tosquare-pin adapter. To maintain the probe’s full performance, the connection between the probe tip and the PCB is kept as short and well-shielded as possible. A board-mounted MMCX connector offers the best coaxial connection, but make sure to route short Kelvin traces from the FET gate and source. While the isolated probe may be the best - and only - way to measure high-side GaN gate voltages, let’s see how another common method stacks up. Passive Probes High-side gate signals can be measured with two ground-referenced passive probes, a digital oscilloscope, and math. This A - B or pseudo differential technique1 remains popular for evaluating gate timing on low voltage DC-to-DC converters, even though it suffers from limited voltage range and CMRR. Before taking high-side gate measurements, it’s best to do a quick common-mode rejection check. Connect both the probes Figure 2. GaN controller with internal smart bootstrap switch. Figure 4. Isolated probe setups. Figure 3. Turn-on waveforms with isolated probe.
14 GALLIUM NITRIDE www.analog.com Issue 3 2026 Power Electronics Europe www.power-mag.com to the same high dv/dt voltage, deskew the timing, subtract one channel from the other, and observe the remaining signal. If the CMRR is adequate, only a small residual voltage should be seen - much less than the actual gate signal. Probe loading is another key factor. Ideally, probing should not affect circuit operation or waveforms. Standard high impedance passive probes have an input impedance of 10MΩ in parallel with 3.9pF to 10pF. In contrast, isolated probes have a lower capacitance (under 2pF) to ground. There are also less common, low impedance (500Ω to 5kΩ) passive probes** that offer low capacitance, which can be helpful in these measurements. Results Figure 5 compares the VG – VSW waveform, captured using the A – B method, to the VTOP_GS measurement from the earlier Figure 3 isolated probe setup (shown as a dashed line). For this test, low impedance passive probes (5kΩ //<2pF) were selected because higher capacitance probes (≥3.9pF) caused a noticeable decrease in VSW’s peak amplitude, indicating probe loading. The gate waveforms are a reasonable match, though the A – B method shows a 2.7V peak-topeak residual common-mode signal - high compared to the 7V peak-to-peak VG – VSW signal. High impedance passive probes showed similar levels of residual commonmode noise, but the measured VG – VSW peaks were 17% to 30% lower, likely due to loading, matching, and response issues. In Figure 6, VG and VSW were captured using a single passive probe in two steps. With this method, the VG waveform is captured and saved in memory. The same probe is then moved and used to capture VSW. Note that a second probe, connected to VSW, triggers the oscilloscope during both measurements. Channel math is used to recall and subtract the waveforms. This approach adds an extra step but improves common-mode rejection by avoiding probe mismatches. While high impedance passive probes performed better than expected, the low impedance probes provided results that more closely matched those of the trusted isolated probe, making them the preferred choice in this case. Conclusion Low voltage GaN DC-to-DC converters offer clear size and performance advantage over their silicon counterparts. However, these benefits come with new challenges, including the need for precise gate voltage control and accurate high-side gate measurements. With the right combination of GaN-optimised controllers and appropriate measurement techniques, these challenges can be addressed - enabling robust, efficient designs without the need for additional circuitry. Analog Devices: www.analog.com Reference 1“Fundamentals of Floating Measurements and Isolated Input Oscilloscopes.” Tektronix. About the Authors Kurk Mathews is a senior applications manager for the Power Control Group at Analog Devices in California. His group supports power applications and the development of new controllers. He enjoys analogue circuit design and troubleshooting using a variety of new and old test equipment. Kurk graduated from the University of Arizona with a B.S. in electrical engineering. Luis Onofre Lazaro is an applications engineer for the Power Control Group at Analog Devices in California. Luis joined ADI after graduating from California Polytechnic State University in 2020 with a B.S. in electrical engineering. Figure 6. TOP FET gate measurement (VG - VSW) using one probe. **Referred to as high frequency, low impedance resistor divider, 50Ω or Z0 probes Figure 5. TOP FET gate measurement (VG – VSW) using A – B method.
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