POWER PASSIVE COMPONENTS 19 Power Electronics Europe Issue 3 2026 Power Electronics Europe To receive your own copy of Power Electronics Europe subscribe today at: www.power-mag.com H s o r w r t a H t w p r s w m c e u t c r sufficient current capability while minimizing EMIrelated design concerns and maintaining thermal performance. The SRP201210V Series addresses these requirements through its shielded construction, low DC resistance characteristics, and metal alloy powder core architecture. The Series offers inductance values from 0.24 µH to 0.47 µH and operates across a temperature range of -55 °C to 125 °C. “Designers of wearable devices, mobile electronics, and compact IoT platforms often need to maximize current capability within extremely limited board space,” said Edward Liu, Product Line Manager, Magnetics, Bourns. “The SRP201210V Series combines a 2.0 mm x 1.2 mm footprint, a 1.0 mm maximum profile, and high current performance supported by a metal alloy powder core. Its shielded construction also helps reduce magnetic field radiation, which can simplify integration in densely populated layouts.” https://bourns.com/ Infineon Technologies has announced it will deliver silicon carbide (SiC) power devices to Eaton, an intelligent power management company, for use in its medium-voltage solid-state transformer (MVSST) 2.0 platform designed for deployment across APAC. The collaboration helps increase the efficiency and reliability of the power conversion required to connect AI data centres to the electricity grid. It targets 800 Volts direct current (VDC) data centre power distribution architectures. The rapid expansion of AI data centres and rising power requirements are driving demand for more efficient ways to connect high-density computing infrastructure to the grid. At the same time, advances in medium-voltage DC distribution technologies are accelerating the need for nextgeneration power conversion solutions that can improve efficiency, power density, scalability and reliability. “As energy demand from AI data centres and industrial applications continues to grow, the demand for efficient, reliable and sustainable power conversion is increasing,” said Andreas Weisl, Executive Vice President and Chief Sales Officer of Industrial & Infrastructure at Infineon. “By Infineon and Eaton Leverage Silicon Carbide Technology to Advance Solid-State Transformers for 800 VDC AI Data Centre Power Architectures joining forces with Eaton, we aim to advance solidstate transformer technology and contribute to the development of a more scalable, efficient and sustainable infrastructure for powering the AI data centres of the future.” “Against the backdrop of rapidly increasing requirements for power efficiency, system reliability and scalability in AI data centres, our goal is to advance the development and adoption of SST technology. Thus, we aim to create greater value for data centre and power grid operators as well as the renewable energy sector,” said David Zheng, Vice President of R&D for Power Quality in APAC at Eaton. “Infineon’s advanced SiC technology is helping us accelerate the deployment of these next-generation power architectures.” Designed for high-density computing infrastructures and emerging 800 VDC AI data centre power distribution architectures, Eaton’s MVSST 2.0 platform reduces conversion stages compared with conventional architectures, improving efficiency, power density and deployment flexibility. As one of the first mediumvoltage solid-state transformer platforms to achieve IEC certification, it combines advanced silicon carbide technology with Eaton’s expertise in power distribution and conversion to support nextgeneration energy infrastructure. Looking ahead, Eaton and Infineon are exploring next-generation SST platforms based on 2.3 kV and 3.3 kV SiC power modules to support higher system voltages, greater efficiency and enhanced reliability for future AI data centres, grid modernisation and renewable energy applications. https://www.infineon.com/ Andreas Weisl, Executive Vice President and Chief Sales Officer of Industrial & Infrastructure at Infineon)
RkJQdWJsaXNoZXIy MjQ0NzM=