NEWS 5 Power Electronics Europe Issue 3 2026 Power Electronics Europe 6.5 kV SiC thyristors in 2010, recognised with a 2010 R&D 100 Award 10–15 kV PiN diodes in 2012 6.5 kV SiC MOSFETs commercial release in 2021 “The ALATTIS award marks a significant milestone in advancing ultra-high-voltage silicon carbide (SiC) power devices and recognises Navitas’ over 20 years of innovation in delivering reliable, ultra-high-voltage, high-power SiC technologies,” said Siddarth Sundaresan, SVP and Chief Technology Officer at Navitas. “This programme enables Navitas to extend its leadership beyond SiC MOSFETs by developing next-generation 10 kV SiC IGBTs built on our unique, patented trench-assisted planar (TAP) architecture and integrated with advanced PiN diode technologies.” To learn more about Navitas’s capabilities in UHV SiC technology, please contact a Navitas Representative or email: info@navitassemi.com. https://navitassemi.com/home Renesas Electronics Corporation, a premier supplier of advanced semiconductor solutions, says it has launched the industry’s first 650V GaN device with dual-side cooling for high-density power conversion in 800V highvoltage DC (HVDC) AI data centre architectures. The company says the new TP65H020G4PLSGBD D-Mode device delivers 20 milliohms (mΩ) on-resistance — one of the lowest in its class — in an ultracompact, dual-side-cooled (DSC) PQFN package that handles more power in less space. Renesas is currently sampling the device to major AI Datacenter OEMs and ODMs. Built on its Gen IV Plus GaN architecture, the device is purpose-built for the megawatt-scale demands driving next-generation AI data centres supporting up to 700V operation. It targets the 800V DC/DC intermediate bus converter (IBC) stage that steps down to 48V, 12V or 6V, along with the battery backup (BBU) and capacitor bank (CBU) stages of the sidecar power rack. As rack power climbs from roughly 120 kW toward megawatt scale, space and heat have become critical factors in sustaining the power level. Unlike conventional top-side-cooled packages, the new device dissipates heat from both top and bottom, lowering top-side thermal impedance by 10%. Its 8 x 8mm PQFN footprint is also 57% smaller than the existing 10 x 15mm TOLT package. The device incorporates the full strength of Renesas Gen IV Plus 650V GaN technology: low gate charge and output capacitance, a built-in freewheeling diode with minimal reverse recovery and a high threshold voltage that runs without a negative gate bias. Engineers can drive it with a standard silicon gate driver, switch into the MHz frequency range to minimize passive components and cut overall BOM cost without requiring a specialized E-mode driver. “Customers building megawatt-scale AI data centers are running out of board space and thermal headroom before they hit their power limits,” said John Wiggenhorn, Senior Product Line Director of High-Voltage GaN at Renesas. “With the industry’s first dual-side-cooled 650V GaN, we cool the device from both sides and cut the footprint significantly, so designers can move more power through the intermediate bus without redrawing the board or adding more cooling hardware. And because it keeps the operational simplicity of the silicon gate drive customers already use, it’s an extremely easy upgrade.” The new dual-side-cooled (DSC) PQFN package is defined in collaboration with major AI infrastructure customers, enabling an industry-standard footprint for sourcing flexibility. When paired with Renesas AUX controllers, gate drivers and MCUs, the GaN device creates a one-stop-shop power solution for OEMs, ODMs and hyperscalers moving to 800V architectures. Renesas says it has already validated the approach in silicon. A 6kW, 800Vto-48V LLC DC transformer (DCX) reference design built on the new device and controlled by a Renesas RA6T3 MCU reaches a power density of 2.6 kW/in? with per-module testing measuring full-load efficiency 0.21% higher than an equivalent TOLT-based board. The smaller package also saves PCB space and enables a better-matched layout across the FETs. 800V-to-12V and 6V DC/DC IBC reference designs also leverage the new DSC 8?8 platform, delivering similar enhanced performance, scalability and power density levels. https://www.renesas.com/en 650V GaN Device with Dual-Side Cooling Nitride Chip Resistors Deliver High Power Stackpole Electronics says its RMAN series combines thick film resistor technology with the superior heat-dissipating capability of an aluminium nitride (AlN) substrate for industrial and automotive electronics operating at high power or under sustained load. The construction helps reduce localised heating for higher power density, lower operating temperatures, and improved stability. Aluminium nitride provides thermal conductivity several times higher than conventional alumina while maintaining electrical insulation. This makes the RMAN well suited for compact power electronics where effective thermal management directly impacts resistor performance and reliability. Industrial applications include gate and snubber resistors for IGBT, SiC, and GaN power modules, along with pre-charge, discharge, bleeder, and currentsensing functions in motor drives, power supplies, and inverters. Automotive applications include battery management systems, onboard chargers, DC-DC converters, and inverter gate drives, where continuous loading and thermal cycling demand stable resistor performance.
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