4 NEWS Issue 3 2026 Power Electronics Europe www.power-mag.com 3300V SiC MOSFET Module for Industrial Equipment Toshiba Electronics Europe has announced the expansion of its line-up with the launch of IX800FXF2YMS4, a dual SiC MOSFET module. The new module offers high surge-current capability to support reliable operation in industrial equipment, including inverters and converters for railway vehicles and power conversion systems such as solid-state transformers, uninterruptible power supplies (UPS) and energy storage systems, and industrial motor control equipment. It also helps improve system efficiency through reduced conduction and switching losses. The IX800FXF2YMS4 uses Toshiba’s improved third-generation silicon carbide (SiC) MOSFET devices. The module has a drain-source voltage (VDSS) rating of 3300V and a drain current (DC) rating (ID) of 800A. The new IX800FXF2YMS4 has an I2t rating of 300kA2s for its diode at initial channel temperature of 175°C, VGS=-6V, a single half-sinewave 10ms pulse, and F.R.=1%. This indicates the diode’s surge current capability under abnormal operating conditions. An optimised SiC MOSFET design enables this performance, helping to improve equipment reliability. In addition, the module’s low conduction and switching losses contribute to improved equipment efficiency and can help reduce cooling requirements. Typical drain-source on-voltage (sense) (VDS(on)sense) is 1.4V at ID=800A, VGS=+20V and Tch=25°C. Typical turn-on and turn-off switching losses (Eon and Eoff) are 185mJ and 175mJ, respectively, at VDD=1800V, ID=800A and Tch=175°C. The new product is housed in the iXPLV (Intelligent Flexible Package Low Voltage) package, which uses silver (Ag) sintering die attach to improve heat resistance and reliability, supporting a channel temperature rating of 175°C. Its launch expands Toshiba’s line-up of SiC MOSFET modules in the iXPLV package to four products. Toshiba says it will continue to expand its line-up of SiC MOSFET modules for industrial equipment and provide a wider range of product options to meet various equipment specifications and applications. Toshiba will also contribute to improved reliability, higher efficiency and more compact industrial equipment. Read more about the new IX800FXF2YMS4 SiC MOSFET module on Toshiba’s website: https://toshiba.semiconstorage.com/eu/semiconductor/product/mosfets/sic-mosfetmodules/detail.IX800FXF2YMS4.html Follow the link below for more on Toshiba’s SiC Power Devices Power Semiconductors | Toshiba Electronic Devices & Storage Corporation | Europe(EMEA) https://toshiba.semicon-storage.com/eu/top.html U.S. Government Selects Navitas Navitas Semiconductor, an industry leader in nextgeneration GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors, has announced it has been awarded the ALATTIS (Accelerated, Large-Area, 10 kV SiC IGBT) programme to develop nextgeneration 10 kV silicon carbide (SiC) power semiconductor technology. Following a rigorous competitive evaluation, the U.S. Army selected Navitas from among leading U.S. silicon carbide technology companies in recognition of its unmatched leadership in UHV SiC innovation, proven ability to deliver defencegrade performance and reliability, and resilient U.S.-anchored manufacturing ecosystem for advanced power semiconductor technologies. The ALATTIS prototype project will develop, execute, and validate a novel domestic manufacturing process for ultra-high-voltage (≥10 kV) silicon SiC power semiconductor devices through iterative design, fabrication, and testing. The project is sponsored by the Army Research Laboratory (ARL), which operates under the U.S. Army Combat Capabilities Development Command (DEVCOM). The ALATTIS prototype programme seeks to develop, execute, and validate a novel and currently unavailable domestic manufacturing process for 10 kV IGBTs. ALATTIS is supported by the Joint Experimentation and Technology Accelerator (JETX) with the aim of advancing high-power electronics for critical defence and infrastructure applications. The programme will accelerate the development of next-generation 10 kV SiC insulated-gate bipolar transistors (IGBTs) and associated PiN diode technologies for mission-critical systems used by the Armed Forces. Navitas’ GeneSiC SiC power semiconductor portfolio, led by its flagship trench-assisted planar (TAP) MOSFET architecture, spans voltage ratings from 650 V to 6.5 kV and is engineered, manufactured, and supported by a resilient U.S.- anchored supply chain, enabling secure domestic production of advanced power semiconductor technologies for next-generation defence and critical infrastructure applications. Navitas says it has pioneered multiple industry firsts in UHV SiC, including:
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