16 POWER PASSIVE COMPONENTS Issue 3 2026 Power Electronics Europe www.power-mag.com Ultra-low resistance, low inductance, and a 5 W power rating support accurate current measurement with reduced power loss Bourns has announced the CRK2725 Series Metal Strip, Wide-Terminal Current Sense Resistors for current sensing and power management applications. The surface-mount series combines resistance values from 0.2 mΩ to 1 mΩ with a 5 W power rating at 70 °C, helping designers measure current in high-current circuits while limiting resistor power loss and heat generation. Current sensing resistors must balance measurement accuracy, power handling, thermal performance, and PCB area. Parasitic inductance can introduce measurement error in fast-switching circuits, while thermal electromotive force can Bourns Introduces New Wide-Terminal Current Sense Resistors for High-Current Power Applications affect precision as operating temperatures change. Higher shunt resistance also increases I?R losses in the measurement path. The CRK2725 Series addresses these constraints with a wide-terminal Solid-State Transformers (SST) serve as the “energy routers” for next-generation power systems, AI computing infrastructure, and rail transit. Medium-tohigh voltage Silicon Carbide (SiC) MOSFETs are the core components that dictate overall system power density, conversion efficiency, and reliability. As a leading Chinese SiC power semiconductor IDM and chip solution provider, InventChip has strategically developed ultra-high voltage SiC technology. The company has now established a complete 3.3 kV SiC MOSFET product matrix covering bare dies, discrete devices, and power modules. Key metrics like switching loss and specific on-resistance are comparable to those from top-tier international manufacturers, with some hightemperature characteristics exceeding those of leading global-grade devices. The products have successfully passed system-level reliability verification by multiple core clients and secured initial commercial orders from top global railway players and leading SST developers. Concurrently, InventChip is advancing the R&D of its 2.3kV and 10kV highvoltage SiC platforms to empower the industrialisation of high-end equipment like railway, wind/solar/storage micro-grids, high-power fast charging, SSTs, and high-voltage BMS. Leveraging its mature, self-developed 3.3 kV SiC process platform, InventChip has introduced three categories of standardised power devices. Paired with its proprietary, dedicated SiC gate drivers, they form an integrated “power device + gate driver” high-voltage SiC solution: 1. 3.3 kV SiC MOSFET Bare Die (IV3Q335S0BD) Ratings: 3.3 kV / 50 Ω Applications: High-voltage Solid-State Relay (SSR), ideal for high-voltage energy storage and rail transit BMS high-voltage insulation resistance detection 2. TO-247-4 HV High-Voltage, High-Creepage Discrete Device (IV3Q33050TH) Ratings: 3.3 kV / 50 mΩ Package: TO-247-4 with enlarged 16.6mm plastic mold creepage, satisfying high-voltage safety standards Applications: small-to-medium power highvoltage conversion systems 3. XPak Half-Bridge Power Module (IVXP332M3HA3): Ratings: 3.3 kV / 2.5 mΩ, continuous DC current of 750A at room temperature and a pulsed current of 1500A Package: XPak Matching Driver: IVCO1B12 driver, featuring gate-oxide leakage current monitoring, constantcurrent drive and integrated negative voltage turnoff bias Applications: Railway transit traction inverters, medium-voltage grid-tie for wind, solar and energystorage systems, and high-power medium-voltage motor drives At the PCIM Europe power electronics exhibition in June 2026, InventChip showcased a megawattlevel rectifier/inverter Solid-State Transformer (SST) prototype built with the XPak 3.3 kV half-bridge module and its matching IVCO1B12 driver board. Compared to traditional silicon-based IGBT solutions, InventChip’s 3.3 kV SiC devices drastically simplify system power conversion stages, reduce overall size and weight, and boost power conversion efficiency. This effectively addresses pervasive industry challenges, including excessive high-frequency switching losses, complex insulation designs, and difficult thermal management. https://www.inventchip.com.cn/En InventChip Launches 3.3 kV Silicon Carbide MOSFETs for SolidState Transformer and High-End Industrial Equipment Upgrades metal strip design, inductance below 5 nH, thermal EMF below 40 µV/°C, and an operating temperature range from -55 °C to +170 °C. Walter Garcia, Product Line Manager, Bourns said: “Designers working with high-current power circuits need to control the electrical and thermal effects introduced by the current sensing element. The CRK2725 Series combines resistance values down to 0.2 mΩ with inductance below 5 nH and thermal EMF below 40 µV/°C. These characteristics support current measurement where power loss, switching behavior, and temperature-related error must be considered together.” https://bourns.com/
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