NEWS 5 Power Electronics Europe Issue 1 2026 Power Electronics Europe Navitas Unveils Breakthrough 10 kW DC-DC Platform Delivering 98.5% Efficiency for 800 VDC Next-Gen AI Data Centres Navitas Semiconductor, a leader in GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors, has announced it has unveiled a breakthrough 10 kW DC-DC power platform delivering up to 98.5% peak efficiency and 1 MHz switching frequency, enabling unprecedented power density to support the rapid, large-scale expansion of next-generation AI data centres. The company says the all-GaN 10 kW 800 V–to–50 V DC-DC platform employs advanced 650 V and 100 V GaNFast FETs in a three-level half-bridge architecture with synchronous rectification to deliver 98.5% peak efficiency and 98.1% full load efficiency in a full-brick (61 ? 116 ? 11 mm) package, achieving 2.1 kW/in? power density. The resulting production-oriented platform supports 800 V–to–50 V and + / - 400 V–to–50 V architectures at 10 kW, integrating auxiliary power and control to simplify adoption and enable high–power-density module designs for next-generation HVDC AI data centres. Read more on Navitas’ Whitepaper on “Redefining Data Center Power: GaN and SiC Technologies for Next-Gen 800 VDC Infrastructure”. “The design platform enables the transition to HVDC data centre power infrastructure, supporting the future power requirements of AI workloads that will demand between 100- and even 1,000-times more compute per query,” said Chris Allexandre, President and CEO of Navitas Semiconductor. “Navitas continues to redefine what’s possible in AI data centre power, with the 10 kW DC-DC solution giving breakthrough efficiency, power density, and scalability to allow faster and cooler operation while making them more sustainable.” The 10 kW DC-DC platform is being evaluated by key data centre customers through collaborative development and will make its debut at the Navitas booth (#2027) at APEC, March 22–26 in San Antonio, TX. https://navitassemi.com/ Infineon’s Silicon Carbide Power Semiconductors Selected for TOYOTA’s New “bZ4X” Infineon Technologies has announced that CoolSiC MOSFETs (silicon carbide (SiC) power MOSFETs) have been adopted in the new bZ4X model from Toyota, one of the world’s largest automakers. The company says iIntegrated into the on-board charger (OBC) and DC/DC converter, the SiC MOSFETs leverage the material’s advantages of low losses, high thermal resistance, and high voltage capability to help extend driving range and reduce charging time. “We are very proud that Toyota, one of the world’s largest automakers, has chosen Infineon’s CoolSiC technology. Silicon carbide enhances the range, efficiency and performance of electric vehicles and is therefore a very important part of the future of mobility.” said Peter Schaefer, Executive Vice President and Chief Sales Officer Automotive at Infineon. “With our dedication and our commitment to innovation and zero-defect quality, we are well positioned to meet the growing demand for power electronics in electromobility.” Infineon says its CoolSiC MOSFETs feature a unique trench gate structure that reduces normalised on-resistance and chip size, enabling reductions in both conduction and switching losses to contribute to higher efficiency in automotive power systems. In addition, optimised parasitic capacitance and gate threshold voltage enable unipolar gate drive, contributing to simplification of drive circuits for automotive electric drive train and supporting high-density, high-reliability design for OBC and DC/DC converters. https://www.infineon.com/ Reliable Transient Voltage Protection for Automotive, Industrial and Energy Applications: Comprehensive TVS Diode Portfolio from YAGEO is Available at Rutronik With a broad portfolio of transient voltage suppression (TVS) diodes by YAGEO, Rutronik says it is strengthening its circuit protection solutions for highreliability electronic systems. Covering standoff voltages from 5 V to 600 V and surge power ratings from 400 W up to 5,000 W, the portfolio is ideally suited for demanding applications in automotive, industrial and energy markets. The TVS diode series from YAGEO are designed to protect sensitive electronic circuits against ESD events, lightning-induced surges, load dump transients, and other voltage spikes. Thanks to their fast-clamping response, high peak pulse current capability, and stable electrical characteristics, the devices can reliably limit transient over voltages to safe levels, protecting downstream components. Depending on the series, the TVS diodes are specified for an operating temperature range from –55 °C to 150 °C, making them suitable for harsh environmental conditions. For automotive applications, selected series are
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