4 IEDM Issue 1 2026 Power Electronics Europe www.power-mag.com The IEEE IEDM is the flagship conference for breakthrough technologies in electronic devices. It attracts leading researchers, technologists, and industry experts from around the world to present the latest developments in device physics, process technology, and applications. The event focused on “100 Years of FETs” and the shift from individual device optimisation to full circuit-level integration to address “Moore’s Wall”. it is 100 years since Julius Edgar Lilienfeld filed a patent for a FET. Such devices remain central to modern electronics and inevitably to the work reported at IEDM 2025. Key highlights Beginning with transistors made from two-dimensional (2D) materials, Quentin Smets and colleagues at Imec, KU Leuven and Intel reported approaches to integrate 2D FETs into back-end-of-line processes. The researchers introduced three distinct device integration schemes: damascene-type top contacts; replacement oxide technology; and interlayer removal. Elsewhere - advances with oxide-semiconductor channel transistors - where Mutsumi Okajima and colleagues at Kioxia Corporation reported a 3D dynamic random-access memory (DRAM) architecture using such transistors. Using polycrystalline silicon thin-film transistors (TFTs), Sanghun Jeon and colleagues at the Korea Advanced Institute of Science and Technology (KAIST) reported the development of a neuromorphic silicon retina that can perceive and process light as spikes. The approach involves the integration of the polycrystalline silicon TFTs, which function as spike generators, and amorphous silicon photodiodes. Work from Jiandong Ye, Guoquan Lu, Yuhao Zhang and colleagues at the University of Hong Kong, Virginia Tech, the City University of Hong Kong and Nanjing University concentrated on the development of an ultrawide-bandgap (UWBG) power module that is capable of 1,000 V and 200 A switching. Other highlights included breakthroughs in Complementary FET (CFET) technology by TSMC and imec, advancements in 3D DRAM and AI acceleration, new heterogeneous integration techniques like Intel’s “DrGaN,” and progress in beyond-silicon materials such as 2D materials and silicon photonics. Technical challenges addressed included thermal management in 3D architectures and reassessing reliability standards for oxide semiconductors. Save the Date for 2026 - December 12-16, 2026 - Hilton Union Square San Francisco https://www.ieee-iedm.org/ The 71st IEEE International Electron Devices Meeting (IEDM 2025) took place on 6-10 December 2025 in San Francisco IEDM REPORT 2025
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