22 PRODUCT UPDATE Issue 2 2024 Power Electronics Europe www.power-mag.com Aimed to provide higher efficiency and power density for telecom, industrial, and computing applications, Vishay has introduced its first fourth-generation 600 V E Series power MOSFET in the new PowerPAK® 8 x 8LR package. Compared to their previous-generation devices, their Siliconix n-channel SiHR080N60E claims to slash on-resistance by 27 % and resistance times gate charge, a key figure of merit (FOM) for 600 V MOSFETs used in power conversion applications, by 60 % while providing higher current in a smaller footprint than devices in the D?PAK package. The company offers a broad line of MOSFET technologies that support all stages of the power conversion process, from high voltage inputs to the low voltage outputs required to power the latest high tech equipment. With the SiHR080N60E and other devices in the fourth-generation 600 V E Series family, the company is addressing the need for efficiency and power density improvements in two of the first stages of the power system architecture — power factor correction (PFC) and subsequent DC/DC converter blocks. Typical applications will include servers, edge computing, super computers, and data storage; UPS; high intensity discharge (HID) lamps and fluorescent ballast these demands, ROHM developed products that achieve higher efficiency in an even smaller package than existing SOP-J8 (JEDEC standard: SOIC8 equivalent) products. The new converter ICs deliver an output current of 1A to 3A in the compact TSOT23 package (2.8mm ? 2.9mm). This reduces component area by up to 72% compared to the general SOP-J8 package (4.9mm ? 6.0mm), contributing to the miniaturization of power supply blocks. On top, adopting a flip chip on lead frame TSOT23 package design enables high-efficiency operation by eliminating bond wire resistance. Empower Semiconductor has unveiled the largest silicon capacitor in its ECAP product family for high frequency decoupling. The new EC1005P is a single 16.6-microfarad (?F) capacitance device suitable for the most demanding power integrity targets as often found in high-performance systems-on-chip (SoCs). It claims to feature ultra-low impedance up to 1GHz in a low profile that can be embedded into the substrate or interposer of any SoC, making it ideal for high-performance computing (HPC) and artificial intelligence (AI) applications. “The performance of SoCs and other large computing processors are constantly increasing,” said Mukund Krishna, senior manager of product marketing, Empower Semiconductor. “It is becoming increasingly difficult to reach the level of power integrity and voltage regulation that these devices require with conventional MLCCs. The EC1005P features close-to-ideal parasitic parameters, allowing these SoCs to operate with reduced voltage margining and ultimately reducing system power.” The EC1005P ECAP claims it leverages Empower’s high-performance and high-density silicon capacitor technology to fulfill the ‘last inch’ decoupling gap from the voltage regulators to the SoC supply pins. This approach substitutes several discrete components with much lower performance and larger footprint, with a single monolithic device that provides optimal electrical performance and simplifies engineering complexity. They further state that the EC1005P has an ultra-low sub-1-picohenry (pH) equivalent series inductance (ESL) and sub-3-milliohm (mΩ) equivalent series resistance (ESR) and is offered in a compact 3.643 x 3.036-millimeter 120pad chip-scale package (CSP). The device comes in a standard profile of 784micron that can be customized for various height requirements. Empower’s industry-leading silicon capacitors provide high stability over voltage and temperature and are not subject to derating or aging like traditional multi-layer ceramic capacitors (MLCCs). For more information visit:www.empowersemi.com. Silicon Capacitor suitable for embedding into any SoC substrate or interposer Fourth-Generation Device Enables Higher Power Ratings and Density Versus D2PAK While Lowering Conduction and Switching Losses to Increase Efficiency
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