PCIM EXHIBITOR ROUND UP 11 www.power-mag.com Issue 2 2023 Power Electronics Europe The company has evolved its Nano Pulse Control, high speed pulse control technology to improve control pulse width from nine nanoseconds to what it claims is an industry best of two nanoseconds. This technology has been developed to meet the high speed switching characteristics of GaN devices. Many design engineers are investigating miniaturisation of the power supply circuit which requires a reduction in size of the peripheral components through high speed switching. Achieving this requires a control IC that can take advantage of the drive performance of high speed switching devices. The company introduced high speed control IC technology for GaN devices using proprietary analogue power supply technology Nano Pulse Control. It plans to ship samples of 100V one-channel DC/DC control ICs in the second half of 2023. Using these ICs in conjunction with Rohm’s EcoGaN devices is expected to result in significant energy savings and miniaturisation opening up design opportunities in a wide range of applications, including base stations, data centres, factory automation equipment and drones. Nano Pulse Control in the ICs combines analogue circuit design, processes and layout to reduce the minimum control pulse width of the control IC. The circuit configuration allows the IC to step down from 60V to 0.6V with a single power supply IC in 24V and 48V applications. Support for smaller drive peripheral components for high frequency switching of GaN devices decreases mounting area by approximately 86% over conventional solutions when paired with an EcoGaN power supply circuit, reports the company and using a single IC instead of the conventional two power supply ICs. Visit Rohm at PCIM Europe 2023 - Hall 9 - 310 High speed control IC technology is optimised for GaN devices The 1200V trench Field Stop VII (FS7) IGBTs will be primarily used in energy infrastructure applications like solar inverters, uninterruptible power supplies (UPS), energy storage and EV charging power conversion. The IGBTs are used to boost input to high voltage (boost stage) as well as the inverter to provide an AC output in high switching frequency energy infrastructure applications. The low switching losses of FS7 devices enable higher switching frequencies that reduce the size of magnetic components, increasing power density and reducing system cost. For high power energy infrastructure applications, the positive temperature co-efficient of FS7 devices enables easy parallel operation, says onsemi. Efficiency is critical in high switching frequency energy infrastructure applications, explains Asif Jakwani, senior vice president and general manager of the advanced power division, at onsemi. The FS7 devices include high-speed (S-series) and medium-speed (Rseries) options. All include an optimised diode for low VF, tuned switching softness and can operate with junction temperatures up to 175°C. The S-series devices, which include the FGY75T120SWD, offer the best switching performance among currently available 1200V IGBTs in the market, says onsemi. Tested with currents up to seven times the rated value, the rugged IGBTs also offer best-in-class latch-up immunity, claims the company. The R-Series is optimised for medium speed switching applications, such as motor control and solid-state relay in which conduction losses are dominant occurs. The FGY100T120RWD, for example, shows a VCESAT as low as 1.45V at 100A, an improvement of 0.4V over previous generation devices. The FS7 devices are available in a range of package styles including TO247-3L, TO247-4L, Power TO247-3L and as bare die. Visit onsemi at PCIM Europe 2023: Hall 9-330 IGBT FS7 switches target energy infrastructure
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