10 PCIM EXHIBITOR ROUND UP Issue 2 2023 Power Electronics Europe www.power-mag.com The 80V and 100V ASFETs for hotswap are in a compact LFPAK88 package measuring 8.0 x 8.0mm and have an enhanced safe operating area (SOA), says the company. The ASFETs are optimised for demanding hotswap and soft-start applications. They are qualified to 175°C for use in advanced telecomms and computing equipment. Until now, ASFETs for hotswap and computing applications were limited to much bigger D2PAK packages (16 x 10 mm). LFPAK88 packages are the ideal replacement for D2PAK, providing up to 60% space efficiency, says the company. The PSMN2R3-100SSE (100V, 2.3mΩ N-channel ASFET) delivers low RDS(on) to meet the requirements of demanding hotswap applications. There second release is the PSMN1R9-100SSE (80V, 1.9mΩ), an 80V ASFET which has been developed for 48V power rails in computing servers and other industrial applications where environmental conditions allow for MOSFETs with a lower BVDS rating. A third ASFET, the PSMN2R3-100SSE has an RDS(on) of only 2.3mΩ, representing at least a 40% reduction on currently available devices. This improves power density improvements by a factor of 58 and the LFPAK88 offers two times higher ID (max) current rating together with low thermal and electrical resistance. ASFETs with enhanced SOA have a strong linear mode performance to manage in-rush current effectively when capacitive loads are introduced to the live backplane. Low RDS(on) is also important to minimise I2R losses when the ASFET is fully turned on, adds Nexperia. This is the company’s third generation of enhanced SOA technology also achieves 10% SOA improvement compared to previous generations in D2PAK packages (33A vs 30A at 50V at 1ms). The ASFETs have characterised SOA at both 25°C and 125°C. Fully tested, hot SOA curves are provided in the datasheets so design engineers do not have to perform thermal de-rating calculations. This also significantly extends the useful hot SOA performance, says the company. Nexperia also offers a range of 25V, 30V, 80V and 100V ASFETs in a 5.0 x 6.0mm LFPAK56E package, optimised for lower power applications where a smaller PCB footprint is needed. Visit Nexperia at PCIM Europe: Hall 9-317 ASFETs for hotswap are packaged in copper clip LFPAK88 The two100V power stage ICs are the EPC23104, rated at 15A and the EPC23103, rated at 25A join the EPC23102 (100V, 35A) power stage IC. All three ICs can withstand a maximum voltage of 100V and integrate a complete GaN half-bridge power stage that includes symmetrical FETs in half bridge configuration, half bridge driver, level shifter, bootstrap charging, and input logic interface. They are supplied in a thermally enhanced QFN package measuring 3.5 x 5.0mm and which has exposed top for dual side cooling and wettable flanks. Footprint compatibility enables customers to upgrade a design for better performance or lower cost without modification to the board, says EPC, to adapt to changing load requirements. In DC/DC applications, the devices can operate with high efficiency at high switching frequencies (3MHz maximum) and offer higher performance and smaller solution size for 28 to 60V DC/DC in computing, industrial and USB PD 3.1 applications. In 32 to 48V BLDC motor drives for e-mobility, robotics, power tools and drones, the IC can operate with small deadtimes (21ns) and at 100kHz to increase the system efficiency due to less motor core losses and vibrations, and to reduce or eliminate the electrolytic capacitors. “The ePower family of products makes it easy for designers to take advantage of the significant performance improvements made possible with GaN technology,” says Alex Lidow, CEO and co-founder of EPC. “Integrated devices are easier to design, easier to layout, easier to assemble, save space on the PCB, and increase efficiency,” he adds. In addition, these devices can reduce the weight or increase precision in BLDC motor drives, higher efficiency 48V input DC/DC converters, higher fidelity Class-D audio systems, and other industrial and consumer applications, says Lidow. Two development boards, the EPC90151 and EPC90152, are half bridge demo boards featuring the EPC23103 and the EPC23104 ePower Stage ICs, respectively. The boards measure 50.8 x 50.8mm and contain all critical components for easy evaluation. The EPC23103 and EPC23104, together with the development boards (EPC90151 and EPC90152) are available for immediate delivery from Digi-Key. Visit EPC at PCIM Europe 2023 : Hall 9-318 ePower stage ICs integrate a half-bridge power stage
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