26 ADVANCING POWER EFFICIENCY https://www.rirpowersemi.com/ Issue 1 2026 Power Electronics Europe www.power-mag.com Advancing Power Efficiency with SiC Merged-PiN Schottky (MPS) Diodes Perry Schugart, CMO & Head of Business Development, RIR Power Executive Summary The rapid electrification of transportation, renewable energy systems, data centers, and industrial power infrastructure is driving unprecedented demand for power semiconductors that deliver higher efficiency, higher power density, and superior reliability. Silicon Carbide (SiC) technology has emerged as a cornerstone of this transformation, offering dramatic improvements over traditional silicon devices. Within the SiC diode family, Merged-PiN Schottky (MPS) diodes represent a critical evolution beyond conventional SiC Schottky Barrier Diodes (SBDs). By intelligently combining Schottky and PiN diode structures in a single, monolithic device, SiC MPS diodes overcome the historical trade-offs between low conduction loss, high blocking capability, and ruggedness. RIR Power Electronics Limited, leveraging over 55 years of high-power semiconductor expertise and its global Si and SiC development capabilities, is introducing SiC MPS diodes designed to meet the demanding requirements of next-generation EVs, renewable energy systems, industrial drives, aerospace, and green hydrogen infrastructure. RIR’s Leadership in SiC Power Devices RIR is uniquely positioned as India’s only company with existing high-power semiconductor fabrication capability, backed by proven experience in devices rated up to 20,000V and 12,000A. Through its U.S. development operations and its forthcoming first-of-its-kind SiC manufacturing facility in Odisha, RIR is building a vertically integrated SiC ecosystem spanning wafer processing, device design, packaging, and application support. This foundation enables RIR to deliver high-voltage, high-reliability SiC MOSFETs and diodes, optimized not only for electrical performance, but also for manufacturability, long-term reliability, and system-level value. Understanding SiC Schottky and Merged-PiN Schottky Diodes Conventional SiC Schottky Barrier Diodes (SBDs) SiC Schottky diodes are majority-carrier devices that offer: Near-zero reverse recovery charge (Qrr) Extremely fast switching Low switching losses However, at higher voltages and temperatures, traditional SiC Schottky diodes face inherent limitations: Increased leakage current Reduced surge current capability Higher sensitivity to overload and short-term fault conditions These factors can constrain their robustness in demanding applications such as traction inverters, grid-connected converters, and industrial power supplies. SiC Merged-PiN Schottky (MPS) Diodes The Merged-PiN Schottky (MPS) structure integrates a PiN diode region within the Schottky architecture. Under normal forward operation, the device behaves like a Schottky diode, maintaining low forward voltage and fast switching. Under high current or high voltage stress (surge current), the PiN regions become active, dramatically enhancing device ruggedness. This intelligent self-adapting behavior allows MPS diodes to deliver the best attributes of both Schottky and PiN devices—without their traditional drawbacks. Key Performance Advantages of SiC MPS vs. SiC Schottky Diodes One of the key advantages of SiC MPS diodes is in the forward conduction loss curve, RIR Power’s SiC MPS diodes closely match SiC Schottky diodes at low to nominal current, maintaining low forward voltage and high efficiency during normal operation. At higher current and overload conditions, MPS diodes exhibit lower incremental conduction loss as the embedded PiN regions conduct, stabilizing forward voltage and reducing thermal stress compared to conventional SiC Schottky diodes. Pure Schottky Diode (SBD) Merged PiN Schottky Diode (MPS) WHITEPAPER
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