18 POWER-SUPPLY DESIGNS https://www.ti.com/ Issue 2 2025 Power Electronics Europe www.power-mag.com Driving innovation in powersupply designs with integrated TOLL-packaged GaN devices Srijan Ashok – Product Marketing Manager, Texas Instruments Today’s power-supply designs require high efficiency and power density. As a result, designers are using gallium nitride (GaN) devices across various power-conversion topologies. GaN can enable high-frequency switching, which reduces the size of passives and therefore increases the density. GaN also lowers switching, gatedrive and reverse-recovery losses compared to technologies such as silicon and silicon carbide (SiC), which increases the power design efficiency. You can use 650V GaN FETs for the AC/DC-to-DC/DC conversion, or 100V or 200V GaN FETs for DC/DC conversion to implement the power supplies. If you work on cutting-edge products, it is also important to choose devices with an industry-standard footprint in order to streamline the supply chain for procurement teams. For this reason, in the 650V space, the transformer outline leadless (TOLL) package is gaining popularity in high-power-supply designs. Apart from choosing industry-standard devices, integrated devices such as TI’s LMG3650R035 GaN field-effect transistor (FET) can play a major role in creating designs with high density and reliable operation across various power topologies. This device has an integrated gate driver, and protection circuitry such as overcurrent protection, overtemperature protection and short-circuit protection. The integration of protection circuitry helps reduce external components to implement these features. The device can also support multiple power topologies in the high-voltage space, including totem-pole power factor correction (PFC), inductor capacitor, phaseshifted full bridge and dual active bridge. Integrating the gate driver helps you create a simple, high-density and clean layout with significantly reduced parasitic coupling, as illustrated in Figure 1. Integration becomes especially important in high-switching- frequency power conversion because circuit parasitic coupling in the gate loop causes an increase in gate noise and overlap losses. By using integrated power stages, the parasitic coupling becomes negligible and simplifies layouts. Application areas of the TI high voltage TOLL devices Let’s review several major application areas for TI’s TOLL devices where you can leverage the integrated protection features, integrated zero-voltage detection (which reduces third-quadrant losses), and the reduced overlap switching losses caused by negligible parasitic coupling. PSUs for data center and telecommunication power As demand for data centers and hyperscale computing increases, the need to create highly efficient, power- dense power-supply units (PSUs) will grow exponentially. Even as the telecommunications space moves from 4G to 5G – and now 6G – the power requirements of the equipment keep increasing, but the form factor remains the same. This scenario becomes a potent use case for integrated 650V TOLL devices, which primarily convert AC power into a DC bus through the PFC and DC/DC stage, as shown in Figure 2. Our GaN
RkJQdWJsaXNoZXIy MjQ0NzM=