https://toshiba.semicon-storage.com/ HEAT PUMPS 23 www.power-mag.com Issue 1 2025 Power Electronics Europe Integrated design For FOC and other algorithms that need advanced arithmetic and trigonometric functions, one solution is to employ a high-speed Arm® Cortex®-M processor and use that in combination with on-chip accelerators. Toshiba’s TMPM4KL provides an example of this, employing the Arm® Cortex®-M4 RISC-based processor core running at speeds of up to 160MHz. A key addition to the core processor is the Advanced Vector Engine (A-VE). This provides the hardware support and instructions needed to perform the advanced DSP required by FOC. PWM performance can be improved by the use of on-chip hardware units, such as Toshiba’s A-PMD. This type of unit implements a wave-generation circuit coupled with a synchronous trigger-generation circuit. Across three phases, the wave-generation circuit creates appropriate PWM signals within each cycle. The module includes the ability to insert a dead-time period for each phase, which is a vital element of PWM algorithms to prevent shootthrough in the power stages. These functions can be scheduled automatically based on the data received from a single current shunt. The RD219 reference design couples the TMPM4KL with other carefully chosen support components. For example, in the compressor section, the TK20A60W5 600V DT-MOS MOSFET ensures low conduction losses and delivers with low parasitic capacitances for fast and efficient switching. Motorphase switching control is simplified by the TPD4204F, which integrates a levelshifting gate driver IC with superjunction MOSFETs. Control over additional motors can be provided with sensorless sinusoidal control using the TC78B011FTG motor control driver. All can be managed by the TMPM4KL, which thanks to its accelerators, has the headroom to control two motors using FOC, handle PFC and manage pump-motor controllers solenoid-operated valves. The resulting reference design provides the basis for building efficient heat pumps using the combination of advanced silicon for digital control and high-performance power devices that make the most of wide-bandgap and silicon technologies. To receive your own copy of Power Electronics Europe subscribe today at: www.power-mag.com
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