www.ti.com SEMICONDUCTOR MATERIALS 11 www.power-mag.com Issue 3 2024 Power Electronics Europe Four mid-voltage applications where GaN will transform electronic designs Srijan Ashok - Product Marketing Engineer, GaN, at Texas Instruments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ntroduction The rapid technological expansion means that the appetite for power is increasing. In order to fuel this expansion sustainably, renewable energy sources such as solar are being deployed to power grids increasingly. Similarly, the need for servers is increasing exponentially to enable faster data processing, big data storage and artificial intelligence (AI). As a result of worldwide trends, designers have a big task at hand: keep increasing efficiency in their designs while delivering more power in the same footprint. This challenge has already pushed the adoption of gallium nitride (GaN) in highvoltage power designs because GaN has two major advantages: Increased power density. GaN’s higher switching frequencies enable designers to use smaller-sized passives such as inductors and capacitors, thereby reducing board dimensions. Increased efficiency. Compared to silicon designs, GaN’s superior switching and conduction-loss performance reduce losses by >50%. Alongside the industry-adopted high voltage GaN (rated >=600V), new midvoltage GaN solutions (rated 80V-200V)
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