Power Electronics Europe Issue 4 - November 2022

12 SILICON CARBIDE www.wolfspeed.com Issue 4 2022 Power Electronics Europe www.power-mag.com carrying and thermal capabilities (Figure 6). Figure 6: The double-sided Ni/Pd/Au plated metal stack-up double-sided copper soldering/sintering for higher current and thermal performance. Robust performance for automotive apps The AEC-Q101-qualified MOSFETs are robust enough to withstand failure modes like short circuit and surge, which are important factors to consider in automotive applications where high robustness is necessary. [3] This die has high energy capabilities of 1.2 J in short circuit conditions and >2.6µs withstand time at a junction temperature of 175°C. This short circuit withstand time (tested under worst case conditions) offers an adequate safety margin for gate driver technology to handle the fault. The devices have also been tested to withstand surge currents of up to 340 A or, depending on application conditions, >3x rated current. This surge current capability is important for active short circuit modes or other high current events. The die is also capable of withstanding high temperature excursion events up to 200°C for a limited time without affecting device reliability. This functionality was demonstrated with extended high temperature AEC-Q101 tests at 200°C for 168 hours. Switching performance tests under standard conditions demonstrated 30 V/ns and 4 A/ns switching speeds, without exceeding the voltage rating during transients. The device also exhibited consistent switching losses over temperature, with only a 150 µJ increase in total switching losses in a device tested from 25°C to 175°C. The fast switching capability of these devices and stable operation over temperature leads to overall lower switching losses in the system. Summary Wolfspeed has shared new details of its 200 mm expansion and new automotive- qualified 750 V MOSFETs designed for use in electric vehicle powertrain applications. Robust operation to 200°C, strong short- circuit energy (1.2 J) and time (> 2.6 µs) capabilities, surge currents up to 340 A, and low (10 m ) conduction losses have enabled the 750 V, 10 m SiC MOSFETs to be successfully designed into new battery electric vehicles. References 1. Cree Becomes Wolfspeed, GM Deal Signals The Coming End Of The ICE Age (forbes.com) 2. Wolfspeed to Build New SiC Manufacturing Facility at Marcy Nanocenter | Regional Economic Development Councils (ny.gov) 3. A. Romero, et al, “High Temperature Performance of Next Generation 1200V SiC MOSFET die with Advanced Packaging Technology,” PCIM, May 2022. Figure 5: The new device offers a temperature-stable V th (blue) for greater freedom in avoiding spurious turn ONs. Figure 6: The double-sided Ni/Pd/Au plated metal stack-up double-sided copper soldering/sintering for higher current and thermal performance. To receive your own copy of Power Electronics Europe subscribe today at: www.power-mag.com